Pnp InGaAsN-based HBT with graded base doping

C. Monier,A. G. Baca,P. C. Chang,N. Y. Li,H. Q. Hou,F. Ren,S. J. Pearton

Electronics Letters（2001）

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摘要

A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (/spl beta//spl sime/60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3/spl times/12 /spl mu/m/sup 2/ non-self...

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关键词

gallium arsenide,aluminium compounds,indium compounds,heterojunction bipolar transistors,semiconductor doping,III-V semiconductors,semiconductor device measurement

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