A study of Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs by reflection high-energy electron diffraction

The growth behavior of Ar-ion-laser-assisted metalorganic molecular beam epitaxy (MOMBE) of (001) GaAs, in the temperature range 330–450°C with triethylgallium (TEGa) and As4, was studied by monitoring the specular-beam intensity oscillations of reflection high-energy electron diffraction (RHEED), with the laser turned on and off. The decomposition rate of TEGa is enhanced under Ar+ laser irradiation. The Ar+ laser also enhances the surface migration of adsorbates and arsenic desorption. In the arsenic-controlled growth regime, the growth rate increases monotonically at low laser power and tends to saturate at high laser power due to a balance between enhanced decomposition of TEGa and desorption of arsenic.