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Understanding Radiation- and Hot Carrier-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress

IEEE Transactions on Nuclear Science(2007)

Cited 19|Views28
Key words
mixed-mode anneal,mixed-mode stress,reaction-diffusion model,SiGe,SiGeHBTs,silicon-germanium,thermal anneal,X-ray irradiation
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