The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins

Static random access memory (SRAM) cells have diminishing read and write margins due to fabrication variations. These variations are a direct result of the small device sizes necessary to maintain scaling commensurate with Moore's law. Total ionizing dose (TID) primarily affects NMOS device characteristics, which are the most important to maintaining SRAM cell read stability. A test structure allo...