InGaAs Nano-ridge Laser Emitting in the Telecom O-band Monolithically Grown on a 300 mm Si Wafer

Davide Colucci,Yuting Shi,Marina Baryshnikova,Yves Mols,Muhammad Muneeb,Yannick De Koninck,Marianna Pantouvaki, Joris Van Campenhout,Bernardette Kunert,Dries Van Thourhout

2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)（2021）

引用 0|浏览16

暂无评分

摘要

The integration of III-V compound materials on Silicon is of paramount importance for the implementation of a complete Silicon Photonics platform where both active components, such as III-V laser diodes and amplifiers, and passive components are present. The monolithic growth of III-V materials on Si substrates is desirable in terms of cost efficiency, mass production and scalability. However, the...

查看译文

关键词

Mass production,Scalability,Lattices,Europe,Silicon photonics,Indium gallium arsenide,Telecommunications

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要