Effect of back-contact copper concentration on CdTe cell operation

A. O. Pudov,Gloeckler, M.,S. H. Demtsu,J. R. Sites,K. L. Barth,R. A. Enzenroth,W. S. Sampath

photovoltaic specialists conference（2002）

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摘要

CdTe solar cells were fabricated with five different concentrations of copper, including zero, used in back-contact formation. Room-temperature J-V curves showed progressive deterioration in fill factor with reduced copper. JSC and QE were similar for all Cu-levels. Capacitance measurement suggested enhanced intermixing at the back contact with copper present. Photocurrent mapping was much less uniform for reduced-Cu cells. Elevated-temperature stress induced very little change in J-V when sufficient Cu was used in the contact.

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关键词

II-VI semiconductors,cadmium compounds,capacitance,chemical interdiffusion,copper,semiconductor device reliability,semiconductor device testing,solar cells,CdTe solar cells,CdTe-ZnTe:Cu,back-contact copper concentration,capacitance measurement,elevated-temperature stress,enhanced intermixing,fill factor deterioration,photocurrent mapping,room-temperature J-V curves

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