Growth of ZnTe by physical vapor transport and traveling heater method

ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from Cu2+ impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.