Layout-Aware Mismatch Modeling For Cmos Current Sources With D/A Converter Analysis

2011 12TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED)(2011)

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摘要
The mismatch of current sources is caused by the circuit error and the process variation. Introducing the channel length modulation lambda to the Pelgrom model for variation analysis, we describe a new Delta I/I model of current sources. To make it clear what variation parameter influences the mismatch, we implemented a test chip on 90nm process technology, where we can collect the characteristics variation for MOSFETs of various layout structures. The test chip also includes D/A converters to check the differential non-linearity (DNL) caused by the mismatch of current sources when behaving as a DAC. Compared to the variation values by removing the circuit errors.. from the measured DNLs, we show that our Delta I/I model with Delta lambda is more accurate than the original Pelgrom model. Furthermore, we reveal the layout dependency in our model for higher accuracy.
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关键词
correlation,integrated circuit layout,process variation,integrated circuit,layout,modulation,semiconductor devices,channel length modulation,differential nonlinearity
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