Ferromagnetic Relaxation in Spin Valves With Picoscale Antiferromagnetic Layers

S. M. Moyerman,Gannett, W.,J. A. Borchers,Doucet, M.,M. J. Carey,P. D. Sparks,J. C. Eckert

Magnetics, IEEE Transactions（2006）

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摘要

We have investigated the mechanism of weak exchange bias for a spin valve with threshold layer antiferromagnetic (AFM) thickness using giant magnetoresistance (GMR) and polarized neutron reflectometry (PNR). Results show that the sample exhibits instantaneous switching of the free layer followed by a gradual reorientation of the magnetization in the pinned ferromagnetic layer via domain wall formation. During subsequent field cycles, we found that relaxation in the pinned ferromagnetic (FM) layer is induced not only by an increasing field, but also in a static field over a relatively long time scale

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关键词

antiferromagnetic materials,ferromagnetic relaxation,giant magnetoresistance,spin valves,ferromagnetic relaxation,giant magnetoresistance,picoscale antiferromagnetic layers,pinned ferromagnetic layer,polarized neutron reflectometry,spin valves,threshold layer antiferromagnetic,weak exchange bias,Antiferromagnetic (AFM) materials,giant magnetoresistance (GMR),interface magnetism

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