Dielectric Properties Of Irradiated Ferroelectric And Antiferroelectric Thin Films

Irradiation effects on highly oriented antiferroelectric (AFE) PbZrO3 (PZ) and on ferroelectric (FE) Pb0.92La0.08(Zr0.65Ti0.35) O-3(PLZT-8) films are investigated. The dielectric properties were measured in the frequency range from 20 Hz (hysteresis measurements) to 250 kHz, at temperatures from 400degreesC to room temperature, as well as before and after irradiation to fast neutron fluences of 1x10(22) m(-2) and 2x10(22) m(-2) . After each irradiation, the films were annealed in several steps up to similar to400degreesC to remove the radiation induced defects. The results are discussed in terms of radiation-induced structural defects and radiation-induced charges. We find that the AFE films show a significantly different behaviour from the FE films.