Characteristics of an AlGaInP-Based Light Emitting Diode with an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure
IEEE Journal of Quantum Electronics（2010）
关键词
AlGaInP,AuBe diffused layer,indium tin oxide (ITO),junction temperature,light-emitting diode (LED),multiple quantum-well (MQW),reliability
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