Empirical reliability modeling for 0.18-μm MOS devices

This paper presents a simple yet effective approach to modeling empirically the 0.18-μm MOS reliability. Short-term stress data are first measured, and the well-known power law is used to project the MOS long-term degradation and lifetime. These results are then used as the basis for the development of an empirical model to predict the MOS lifetime as a function of drain voltage and channel length. Our study focuses on the worst-case stress condition, and both the linear and saturation operations are considered in the modeling. Very good agreement between the measurements and model calculations has been demonstrated.