Optimization of Nano-Oxide Layer in CIP Spin Valves
IEEE Transactions on Magnetics(2004)
摘要
The influence of nano-oxide layer (NOL) on interlayer coupling (Hin) and magnetoresistance (MR) of bottom spin-valves (SV) were studied by inserting NOL at four positions: 1) before the Cu spacer; 2) in the middle of the Cu spacer; 3) after the Cu spacer; and 4) after the Cu cap layer. The NOL smoothens the surface of the interface at position 1), 3), and 4), except for 2). Surface flatten by NOL ...
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关键词
Spin valves,Oxidation,Couplings,Magnetoresistance,Magnetic field measurement,Antiferromagnetic materials,Memory,Surface topography,Magnetic separation,Annealing
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