JFET-CMOS process to meet the requirements of tracking applications at short processing times

The JFET-CMOS process proved to be very effective in the realisation of microvertex detectors front-end systems with very good noise and radiation tolerance characteristics. The introduction of an SOI technique in the realisation of the MOS devices besides improving the speed may further increase the radiation hardness. This would allow an extension of the front-end systems to the operating conditions of large hadron colliders. The paper presents the results of characterisation tests on a charge-sensitive preamplifier based on the JFET-CMOS-SOI process. A new design of a preamplifier system, to be realised in JFET-CMOS-SOI technology and employing a time-invariant filter of short time constant and intended for applications with microstrip detectors at high luminosity colliders, is presented.