Series resistance degradation due to NBTI in PMOSFET

In this paper a new mode of degradation in Negative Bias Temperature Instability (NBTI) of PMOSFET is reported. In addition to conventional NBTI degradation involving channel threshold voltage and mobility drift, we observe that NBTI may lead to series resistance degradation. This mode of NBTI is mainly seen in devices with excess Hydrogen in the system. Here we attribute this to Hydrogen deactivation of Boron in extension region that may cause an increase in series resistance. (C) 2002 Elsevier Science Ltd. All rights reserved.