High-speed modulation of 850 nm InGaAsP∕InGaP strain-compensated VCSELs

Electronics Letters(2003)

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摘要
High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85/spl deg/C.
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关键词
optical modulation,surface emitting lasers,indium compounds,gallium arsenide,III-V semiconductors
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