High-speed modulation of 850 nm InGaAsP∕InGaP strain-compensated VCSELs

H. C. Kuo,Y. S. Chang,F. Y. Lai,T. H. Hsueh,L. H. Laih,S. C. Wang

Electronics Letters（2003）

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摘要

High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85/spl deg/C.

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关键词

optical modulation,surface emitting lasers,indium compounds,gallium arsenide,III-V semiconductors

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