Diffusion Interaction Between Magnesium And Zinc In 650 Nm Laser Diodes Wafer

Zinc (Zn) diffusion in magnesium (Mg) doped AlGalnP based semiconductor laser diode epitaxial wafers has been investigated. After Zn diffusion, the hole concentration in the cladding was about one-fifth of previous value. In addition, Mg in AllnP layer was completely substituted by Zn and has moved towards the surface. Based on secondary ion mass spectrometric analysis, the interaction mechanism of Zn and Mg atoms was proposed. (C) 2009 Elsevier B.V. All rights reserved.