p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas

We investigate the possibility to dilute N-2 in Argon for RF-plasma p-type doping of ZnSe layers. We show that this technique gives a large flexibility which allows to control the free-hole concentration in the whole range From 10(15) to 10(18) cm(-3). We demonstrate that N-related compensating donors are introduced into the material concomitantly with the onset of N incorporation. Finally, we report preliminary results on the doping of Zn(Mg)BeSe alloys. Doping levels in the 10(17) cm(-3) range can be achieved for a band gap lower than 3.0 eV for the ZnMgBeSe quarternary alloys and for a band gap of at least 3.2 eV for the ZnBeSe ternary alloy. (C) 1999 Elsevier Science B.V. All rights reserved.