Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies

Microelectronics Reliability, pp. 1375-1383, 2008.

Cited by: 30|Views2
EI

Abstract:

With the wide application of low-k and ultra-low-k dielectric materials at the 90nm technology node and beyond, the long-term reliability of such materials is rapidly becoming a critical challenge for technology qualification. Low-k time-dependent dielectric breakdown (TDDB) is usually considered as one of the most important reliability i...More

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