Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies
Microelectronics Reliability, pp. 1375-1383, 2008.
With the wide application of low-k and ultra-low-k dielectric materials at the 90nm technology node and beyond, the long-term reliability of such materials is rapidly becoming a critical challenge for technology qualification. Low-k time-dependent dielectric breakdown (TDDB) is usually considered as one of the most important reliability i...More
Get fulltext within 24h
Full Text (Upload PDF)
PPT (Upload PPT)