Novel Circuit-Level Model for Gate Oxide Short and its Testing Method in SRAMs.

Chen-Wei Lin,Mango Chia-Tso Chao,Chih-Chieh Hsu

IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2014）

引用 7|浏览25

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摘要

Gate oxide short (GOS) has become a common defect for advanced technologies as the gate oxide thickness of a MOSFET is greatly reduced. The behavior of a GOS-impacted MOSFET is, however, complicated and difficult to be accurately modeled at the circuit level. In this paper, we first build a golden model of a GOS-impacted MOSFET by using technology CAD, and identify the limitation and inaccuracy of...

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关键词

MOSFET,semiconductor device models,SRAM chips,technology CAD (electronics)

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