Testing methods for a write-assist disturbance-free dual-port SRAM
VTS, pp. 1-6, 2014.
march-like algorithmresistive-open defectssize 28 nmwrite-assist techniquesmarch c-More(9+)
The recent research works of dual-port SRAM have focused on developing new write-assist techniques to suppress the potential inter-port write disturbance under low operating voltage and high process variation. However, the testing related issues induced by those newly proposed write-assist techniques have not been discussed yet in the pre...More
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