Improving The Performance Of Static Cmos Gates By Using Independent Bodies

Steven D. Tucker,Arun Ravindran, Christopher Wichman,Arindam Mukherjee

JOURNAL OF LOW POWER ELECTRONICS（2007）

引用 2|浏览3

暂无评分

摘要

In this paper, the advantages of using independent bodies for each series transistor in static bulk-CMOS gates are considered. This technique reduces internal parasitic capacitance and enhances the transistor conductance, thus improving the delay and power characteristics of the gates.

查看译文

关键词

Low Power, High Speed, CMOS Digital Gates, Body Effect, Parasitic Capacitance

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要