Deep trench isolation for a 50 V 0.35 /spl mu/m based smart power technology

F De Pestel,P Coppens,H De Vleeschouwer,Paul M F Colson,Sylvie Boonen, T Colpaert,P Moens, D Bolognesi, G Coudenys,M Tack

msra（2003）

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摘要

This paper describes the development of a deep trench isolation module for a new 0.35 /spl mu/m CMOS based smart power technology as well-as some major devices taking advantage of the features offered. by this deep trench isolation. The so-called I3T50 technology belongs to the third generation of intelligent interface technologies developed within AMI Semiconductor over the past years. This newest technology is suitable for applications up to 50 V, such as automotive, peripheral, industrial and consumer applications. Trench isolation is used to isolate the devices, hereby substantially reducing the isolation area. A full device library has been released within this technology (n-type and p-type CMOS and DMOS devices, bipolar transistors, high voltage floating diodes, passive components, OTP memory and a set of ESD protection structures).

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关键词

cmos integrated circuits,isolation technology,power electronics,0.35 micron,50 v,cmos smart power technology,dmos,esd protection structures,i3t50 technology,otp memory,automotive applications,bipolar transistors,consumer applications,deep trench isolation module,high voltage floating diodes,industrial applications,intelligent interface technologies,isolation area reduction,n-type cmos devices,p-type cmos devices,passive components,peripheral applications,high voltage,bipolar transistor

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