Characterization of process-induced mobile ions on the data retention in flash memory

IEEE Transactions on Electron Devices(2003)

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摘要
Data retention is a major issue that significantly affects the reliability of nonvolatile memory. In this paper, data retention behaviors due to mobile ions are extensively characterized by using several test methods. The source of mobile ions during the sputtering of Ti/TiN layers for forming salicide inside array was identified by secondary ion mass spectroscopy (SIMS) analysis. Different test s...
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关键词
Integrated circuit testing,Manufacturing testing,Mass spectroscopy,Integrated circuit reliability,Life estimation
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