Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process

A new III-V semiconductor device fabrication process for GaAs-based field effect transistors (FET) is presented which uses a single lithographic process and metal deposition step to form both the ohmic drain/source contacts and the Schottky gate contact concurrently. This single layer integrated metal FET (SLIMFET) process simplifies the fabrication process by eliminating an additional lithographi...