Low-frequency noise in GaAs and InP Schottky diodes

K. F. Sato,C. W. Chan,Najita, K.,M. P. DeLisio,Y. H. Chung,J. Cowles,P. C. Grossman,R. Lai,A. K. Oki,D. C. Streit,H. Wang

Microwave Symposium Digest, 1998 IEEE MTT-S International（1998）

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摘要

This paper examines the low-frequency noise properties of millimeter-wave GaAs and InP Schottky diodes. Measurements of diodes fabricated using both HEMT and HBT epitaxy will be presented. These noise measurements should enable the development of accurate models useful in the analysis and design of MMIC components.

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关键词

III-V semiconductors,Schottky diodes,gallium arsenide,indium compounds,millimetre wave diodes,semiconductor device noise,GaAs,HBT epitaxy,HEMT epitaxy,InP,low-frequency noise,millimeter-wave Schottky diode

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