High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

A. Crespo,M. M. Bellot,K. D. Chabak,J. K. Gillespie,G. H. Jessen,V. Miller,M. Trejo,G. D. Via,D. E. Walker,B. W. Winningham, H. E. Smith,T. A. Cooper,X. Gao,S. Guo

IEEE Electron Device Letters（2010）

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摘要

We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier. This device delivered a maximum of 5.8 W/mm with a power-added efficiency of 43.6% biased at VDS = 20 V and 10% IDSS when matched for power at CW. The device was grown by metal-organic chemical vapor deposition with ...

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关键词

Gallium nitride,HEMTs,Radio frequency,Decision support systems,Power measurement,MODFETs,Silicon carbide,Chemical vapor deposition,Ohmic contacts,Transconductance

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