Intersubband Raman laser from GaInAs/AlInAs double quantum wells

We demonstrate optically pumped GaInAs/AlInAs based intersubband lasers operating at a wavelength of similar to 5.5 mu m applying a simple three-level design. Using a subnanosecond long pulsed excitation laser tunable over the linewidth of the transition from the first level to the third level E-13, Raman shift in the lasing spectra was observed. Lasing output power of similar to 14 W and an internal conversion efficiency between pump and intersubband laser of similar to 1.3% at 70 K is observed. (C) 2007 American Institute of Physics.