Circuit reliability simulation using TMI2

CICC(2013)

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摘要
Using simulation to assess the impacts of various reliability mechanisms to circuit performance has become prevail for advanced technologies due to smaller headroom (=Vdd-Vth) and less design margins. This paper reviews existing circuit aging simulation approaches with focus on TMI. The limitations of aging models are also discussed so that reliability simulations can be executed more correctly with the right expectation. An example circuit under multi-waveform and multi-temperature stress is presented to illustrate reliability simulation flow through TMI.
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关键词
circuit aging simulation,integrated circuit reliability,reliability mechanisms,circuit reliability simulation,hot carriers,smaller headroom,tmi2,circuit performance,ageing
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