Experiments on optoelectronic bistability in distributed AIAs/GaAs-Bragg reflectors

Microelectronic Engineering(1992)

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摘要
We present measurements of optoelectronic bistability in hybrid distributed AlAs/GaAs Bragg reflectors. A threshold optical input power of 40 ¿uW is observed leading to an estimated switching energy of 0.1 fJ¿m¿2 Using voltage shift of 60 V and an optical input power of 100 nW. an electroptical modulation of 40 % is obtained.
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关键词
reflectivity,optical switches,gallium arsenide,threshold voltage
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