Proton tolerance of third-generation, 0.12 μm 185 GHz SiGe HBTs
Nuclear Science, IEEE Transactions(2003)
摘要
We present results on the impact of proton irradiation on the dc and ac characteristics of third-generation, 0.12 μm 185 GHz SiGe HBTs. Comparisons with prior technology generations are used to assess how the structural changes needed to enhance performance between second and third generation technology couple to the observed proton response. The results demonstrate that SiGe HBT technologies can successfully maintain their a Mrad-level total dose hardness, without intentional hardening, even when vertically-scaled in order to achieve unprecedented levels of transistor performance.
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关键词
Gummel characteristics,S-parameters,SiGe,proton effects,DC characteristics,proton irradiation,heterojunction bipolar transistors,structural changes,total dose hardness,third-generation HBT,inverse-mode characteristics,millimetre wave bipolar transistors,Ge-Si alloys,185 GHz,radiation hardening (electronics),AC characteristics
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