Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy

Interfacial dipole presented at the interface of dielectric/silicon has been measured by x-ray photoelectron spectroscopy. With a use of high energy x- ray source, the band bending profile of silicon can be determined. A large negative potential shift with La2O3 on silicon substrate has been observed. The obtained shift is in good agreement with electrical characterization.