Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs

A. Crespo,R. Fitch,J. Gillespie,N. Moser,G. Via,M. Yannuzzi

msra（2003）

引用 27|浏览7

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摘要

Optimization of the ohmic contacts in an n-AlGaN high electron mobility transistors (HEMT) structure is presented. The method used was similar to that reported in (1). In this case four different metal stacks were present in a single wafer. The metal stacks were optimized for different vendors. The results from the optimization are presented.

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关键词

hemt,ohmic contact,gan,high electron mobility transistor

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