Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

P. C. Chang,N. Y. Li,A. G. Baca,H. Q. Hou,C. Monier,J. R. Laroche,Fengyuan Ren,S. J. Pearton

IEEE Electron Device Letters（2001）

引用 23|浏览9

暂无评分

摘要

We have demonstrated the dc and rf characteristics of a novel p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor. This device has near ideal current-voltage (I-V) characteristics with a current gain greater than 45. The smaller bandgap energy of the InGaAsN base has led to a device turn-on voltage that is 0.27 V lower than in a comparable p-n-p AlGaAs/GaAs heterojunction bipolar tran...

查看译文

关键词

Gallium arsenide,Double heterojunction bipolar transistors,Heterojunction bipolar transistors,Lattices,DH-HEMTs,Photonic band gap,Voltage,Indium gallium arsenide,Foundries,Capacitive sensors

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要