Doping-Induced Defects Of Cd1-Xznxte Grown From Te Solution

A comparison is made for undoped and lightly indium-doped Cd1-xZnxTe grown from Te solution by using photoluminescence and admittance spectroscopy to study the doping behavior in Cd1-xZnxTe. Two acceptor traps are found to be induced by In doping: one is located at about 0.15 eV above the valence band, which is the well-known A-center, and the other is located at E(v) + 0.27 eV with the capture cross section of 8.4 x 10(-14) cm2.