Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates

The growth of SiGe crystals on a V-groove patterned Si(110) substrate and the fabrication of pMOSFET using this material were carried out. The crystalline and surface morphologies were significantly improved compared to those of a film grown on a planar Si(110) substrate. A self-organized selective growth was observed, which was attributed to the local enhancement of the sticking coefficient. A significant enhancement of drain conductance was accomplished, which was attributed to the lower effective mass of strained SiGe crystal which became effective by the improvement of crystalline morphology.