Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz

A demonstration of the high performance microwave-noise characteristics of robust 0.15 /spl mu/m gate-length GaN/AlGaN MODFETs is reported. Very low noise figures were achieved through the optimisation of materials growth and device fabrication processes. A minimum noise figure of 0.60 dB at 10 GHz has been achieved with a gate-drain breakdown voltage of 68 V. These excellent combined characterist...