Investigation of hydrogen concentration and hardness of ion irradiated organically modified silicate thin films

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms(2010)

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摘要
A study of the effects of ion irradiation of organically modified silicate thin films on the loss of hydrogen and increase in hardness is presented. NaOH catalyzed SiNawOxCyHz thin films were synthesized by sol–gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300°C, the films were irradiated with 125keV H+ or 250keVN2+ at fluences ranging from 1×1014 to 2.5×1016ions/cm2. Elastic Recoil Detection (ERD) was used to investigate resulting hydrogen concentration as a function of ion fluence and irradiating species. Nanoindentation was used to measure the hardness of the irradiated films. FT-IR spectroscopy was also used to examine resulting changes in chemical bonding. The resulting hydrogen loss and increase in hardness are compared to similarly processed acid catalyzed silicate thin films.
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关键词
Ion irradiation,Sol–gel,Hybrid organic/inorganic,Elastic Recoil Detection
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