A Proposal Of Tc-Mosfet And Fabrication Process Of Twin Si Channels

Twin-Channel (TC)-MOSFET with twin omega-gate (Omega-gate) Si channels and its fabrication process were proposed. The twin Si channels are able to be fabricated by self-aligned process utilizing wet etching of SiN and silicon-on-insulator (SOI) wafers. Three-dimensional (3-D) device simulation was performed to optimize gate structure for TC-MOSFET with 10 nm x 10 nm (T-si x W-G) channels with the gate length of 30 nm, and it was found that TC-MOSFET with right-angled Omega-gate in case the L-under was 3 nm showed excellent device characteristics similar to the gate-all-around (GAA) devices corresponding to the gate structure as L-under = 5 nm. Fabrication process of twin Si channels was also investigated experimentally, and approximately 40 nm x 40 nm twin Si channels were successfully fabricated on SOI by the proposed fabrication process.