Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS(2014)
摘要
The relationship between surface roughness of indium tin oxide (ITO) and leakage current of organic light-emitting diode (OLED) was investigated. The surface roughness of ITO was measured with atomic force microscope (AFM) before the device fabrication by using these substrates, OLEDs were fabricated and their electrical properties were measured. leakage current of OLEDs depending on the surface roughness of the substrate. In this letter, we report that leakage currents of OLEDs are highly dependent on the peak-to-valley roughness (Rpv) of ITO.
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关键词
indium tin oxide,organic light emitting diode,surface roughness,leakage current
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