Effect of a thin ionized-metal-plasma deposited Cu layer on the properties and thermal stability of Cu-TaN-SiO/sub 2/-Si structures

D. H. Zhang,S. W. Loh,C. Y. Li,Rong Liu,A. T. S. Wee

IEEE Transactions on Device and Materials Reliability（2001）

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摘要

Cu-TaN-SiO/sub 2/-Si structures, fabricated in a three-in-one system, were systematically investigated using various techniques. By depositing a thin plasma-metal-plasma (IMP) Cu layer on the TaN barrier prior to the copper film deposited using metal-organic chemical vapor deposition, the sheet resistance, uniformity, and adhesion of the metal in the Cu-TaN-SiO/sub 2/-Si structures can be signific...

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关键词

Copper,Chemical vapor deposition,Plasma chemistry,Plasma stability,Adhesives,Circuit stability,Thermal stability,Chemical elements,Integrated circuit interconnections,Application specific integrated circuits

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