A 3-V variable-gain amplifier in Si/SiGe BiCMOS technology for 5-GHz WLAN applications: Research Articles

F. Alimenti,V. Palazzari,L. Roselli,A. Scorzoni

International Journal of RF and Microwave Computer-Aided Engineering - Microwave Power Amplifier Modeling and Design（2005）

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摘要

A variable-gain class-A amplifier for 5-GHz wireless local area networks (WLAN) applications is developed using commercial 0.35-μm Si/SiGe BiCMOS technology. The amplifier is based on a cascode differential pair and is fully integrated with input and output matching networks. The design starts with application of the Cripps' method and it is further refined by nonlinear harmonic-balance simulations. These simulations are in good agreement with the measurements carried out at wafer level on a realized prototype. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE 15, 2005.

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关键词

3-v variable-gain amplifier,m si,variable-gain class-a amplifier,cascode differential pair,wiley periodicals,sige bicmos technology,microwave cae,5-ghz wlan application,good agreement,inc. int j rf,5-ghz wireless,research articles,local area network

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