Electrical properties of undoped and ion-implanted type IIa diamonds measured by photo-Hall
Diamond and Related Materials（2005）
摘要
The reasons why no reliable n-type chemical doping can be obtained in P implanted and annealed diamond is addressed by studying the nature and conductivity type of the compensating defects and their interactions with both n- and p-type implanted dopants using optical (absorption and photoluminescence) and low temperature (20更多
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关键词
n- and p-type doping,Electrical properties,Native defects,Ion implantation,Electrical properties
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