谷歌浏览器插件
订阅小程序
在清言上使用

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

IEEE Transactions on Device and Materials Reliability(2006)

引用 36|浏览7
关键词
hot-carrier degradation,lateral diffused MOS (LDMOS),three-region charge pumping (CP)
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要