Eye-diagram simulation and analysis of a high-speed TSV-based channel

3DIC(2013)

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摘要
In this paper, the worst-case and statistical eye-diagrams of high-speed TSV-based channel are simulated and analyzed. To analyze the electrical characteristic of TSV-based channel, the eye-diagrams with various TSV and silicon interposer interconnect structures are simulated and compared each other. In addition, the single-channel bandwidth in accordance with the channel types and the metal widths of the silicon interposer interconnect are investigated based on the simulated eye-diagrams. By using the obtained single-channel bandwidth of the high-speed TSV-based channel, the escaping bandwidth that corresponds to the total bandwidth of the TSV-based system is also investigated.
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关键词
integrated circuit interconnections,statistical eye-diagram,silicon interposer interconnect structures,three-dimensional integrated circuits,worst-case eye diagram,high-speed tsv-based channel,silicon,statistical eye diagram simulation,escaping bandwidth,elemental semiconductors,worst-case eye-diagram,through-silicon-via technology
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