Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（1999）
摘要
A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the field distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization.
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关键词
SI-GaAs,Particle detectors,Field-enhanced electron capture
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