Approximation of the length of velocity saturation region in MOSFET's

IEEE Transactions on Electron Devices（1997）

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摘要

This work presents an accurate approximation of the length of velocity saturation region (LVSR) based on the calculation of one-dimensional (1-D) electric field distribution near the drain region of MOSFET's. Results show that for short-channel devices (<1 /spl mu/m), the LVSR values calculated with the new model are much smaller than the conventional approach. The new model agrees well with the M...

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关键词

MOSFET circuits,Gallium arsenide,Electrons,Microwave devices,Heating,Etching,Heterojunctions,Solid state circuits,MESFETs,Kinetic energy

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