Photoluminescence characterization of beryllium-implanted 6H–silicon carbide

Beryllium has been implanted into both n- and p-type 6H–SiC with post-implantation annealing at 1600°C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431nm, and a broad band at around 505nm have been observed. The line at 420.5nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.