Localization and quantification of noise sources in four-gate field-effect-transistors

In this paper the effects of different noise sources in a four-gate field-effect-transistor have been studied and quantified in different operation regimes of the structure. To carry out this study, a model that captures the main features of generation–recombination noise, produced by the fluctuations of trapped charge in the depletion regions of the device, and 1-f noise, produced by the fluctuations of trapped charges at the silicon–oxide interfaces, has been incorporated into a two-dimensional device simulator. The existence of different kinds of bulk traps in the semiconductor may complicate the interpretation of experimental noise measurements. Anomalies in the noise behavior, produced by certain traps at specific biased voltages, have been explained by means of the simulation of the device. Copyright © 2010 John Wiley & Sons, Ltd.