Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures

The temperature bias instability of high-voltage oxides is analyzed. For the investigation of negative bias temperature instability (NBTI) we present an enhanced reaction–diffusion model including trap-controlled transport, the amphoteric nature of the Pb centers at the Si/SiO2 interface, Fermi-level dependent interface charges, and fully self-consistent coupling to the semiconductor device equations. Comparison to measurement data for a stress/relaxation cycle and a wide range of temperatures shows excellent agreement.